Electron and Ion Tracks in Silicon: Spatial and Temporal Evolution

Abstract

Calculations based on our Monte Carlo code for the transport of electrons and ions in silicon are presented. The code follows the trajectories of all secondary electrons down to a very low cut-off energy (1.5 eV). The spatial and temporal distributions of the deposited energy around ion tracks in silicon are also calculated. The prompt electrical fields generated by the charges at the early stage of the track evolution are evaluated, taking into account carrier recombination. Using the statistics of the energy deposition events in small sensitive volumes, we find that the SEE cross sections in modern devices depend on the ion energy, in addition to its LET.