Ion-track structure and its effects in small size volumes of silicon

Abstract

A model for ion-energy deposition in silicon, based on experimental data of the optical energy loss function, is presented. The model yields the characteristics of ion- and electron-interactions in silicon. Monte Carlo transport calculations based on this model give the energy distribution and its moments including a full and consistent description of the spatial ion track structure. The model was used for estimating the influence of the track structure on energy deposition in submicron devices and on the shape of the single event upsets (SEUs) cross-section curves.