Structural, ferroelectric, and pyroelectric properties of highly <i>c</i>-axis oriented Pb1−<i>x</i>Ca<i>x</i>TiO3 thin film grown by radio-frequency magnetron sputtering

Eiso Yamaka, Hirohito Watanabe, Hideki Kimura, +2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceMagnetismMultiferroicsMagnetic PropertiesEngineering +11

Tunneling Spectroscopy of Y-Ba-Cu-O Compound

Ienari Iguchi, Hirohito Watanabe, Yuji Kasai, +3

Japanese Journal of Applied Physics

Materials ScienceSemiconductorsSingle ParticleEngineeringHigh-tc Superconductivity +13

Ulfrathin Tantalum Oxide Capacitor Process Using Oxygen‐Plasma Annealing

Satoshi Kamiyama, Hiroshi Suzuki, Hirohito Watanabe, +3

Journal of The Electrochemical Society

Materials EngineeringMaterials ScienceElectrical EngineeringTantalum Oxide FilmEngineering +7

SrTiO₃ thin films by mocvd for 1 gbit DRAM application

Pierre‐Yves Lesaicherre, Hiromu Yamaguchi, Yoichi Miyasaka, +3

Integrated ferroelectrics

Thin Film PhysicsEngineeringEmerging Memory TechnologyThin Film Process TechnologyChemical Deposition +16

A capacitor-over-bit-line (COB) cell with a hemispherical-grain storage node for 64 Mb DRAMs

M. Sakao, N. Kasai, T. Ishijima, +4

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureIntegrated Circuits +17

Device application and structure observation for hemispherical-grained Si

Hirohito Watanabe, Nahomi Aoto, S. Adachi, +1

Journal of Applied Physics

EngineeringEmerging Memory TechnologyThick Dielectric FilmIntegrated CircuitsSilicon On Insulator +17

Electrical Resistivity, Critical Current and Crystal Orientation of the Sintered Y-Ba-Cu-O Compounds

Hirohito Watanabe, Yuji Kasai, T. Mochiku, +3

Japanese Journal of Applied Physics

Materials ScienceElectrical EngineeringSinteringHigh Temperature MaterialsEngineering +12

High mobility MISFET with low trapped charge in HfSiO films

A. Morioka, Hirohito Watanabe, Makoto Miyamura, +10

Electrical EngineeringSemiconductor DeviceEngineeringPhysicsHfsio Gate Stack +13

New stacked capacitor structure using hemispherical-grain polycrystalline-silicon electrodes

Hirohito Watanabe, Nahomi Aoto, S. Adachi, +3

Applied Physics Letters

Non-volatile MemoryEngineeringHybrid CapacitorEmerging Memory TechnologyComputer Memory +20

A 4-level storage 4 Gb DRAM

T. Murotani, I. Naritake, T. Matano, +8

Hardware SecurityFile Application DramsElectrical EngineeringEngineeringChip Size Reduction +11