2002 · 45 citations · 1 references
EngineeringComputer EngineeringElectrical EngineeringComputer ArchitectureMicroelectronicsSemiconductor DevicesDielectricsIntegrated Circuit DesignMemory DevicesMemory Hierarchy DesignMemory Subsystem DesignStorage TechnologyGrain StorageMemory Cell DesignMemory Circuit DesignMemory CircuitsMemory MaterialsNon-volatile Memory DesignSurface Area
A novel capacitor-over-bit-line (COB) cell with a hemispherical-grain (HSG) poly-Si storage node has been developed. This memory cell provides large storage capacitance by increasing the effective surface area of a simple storage node and is manufacturable by optical delineation. The feasibility of the COB cell for 64-Mb DRAMs has been verified by a 64-kb test memory with 1.8- mu m/sup 2/ cells using a 0.4- mu m design rule, storage capacitance of 30 fF, 7-nm-SiO/sub 2/-equivalent dielectric film, and a storage node height of 0.5 mu m.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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