O. Tsukakoshi

A 26‐cm electron‐cyclotron‐resonance ion source for reactive ion beam etching of SiO₂ and Si

M. Miyamura, O. Tsukakoshi, S. Komiya · Journal of Vacuum Science and Technology · 1982 · 31 citations

Materials Science, Electrical Engineering, Ion Implantation +11

A Molecular and Ion-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Ion Beam

Saburo Shimizu, O. Tsukakoshi, S. Komiya et al. · Japanese Journal of Applied Physics · 1985 · 26 citations

Engineering, Group V Element, Ion-beam Epitaxy System +16

Molecular beam epitaxy of GaAs using a mass-separated, low-energy As+ ion beam

Saburo Shimizu, O. Tsukakoshi, S. Komiya et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 19 citations

Semiconductors, Materials Science, Electrical Engineering +15

A high-current low-energy multi-ion beam deposition system

O. Tsukakoshi, Saburo Shimizu, Seiji Ogata et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 18 citations

Electrical Engineering, Ion Implantation, Engineering +3

A Simple Ion Energy Analyser Equipped with a Quadrupole Mass Spectrometer

T. Satake, Tadashi Narusawa, O. Tsukakoshi et al. · Japanese Journal of Applied Physics · 1976 · 14 citations

Biological Mass Spectrometry, Ion Beam Instrumentation, Ion Mobility Spectrometry +19