S. Wang

Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

D. S. Ang, S. Wang · IEEE Electron Device Letters · 2006 · 45 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

D. S. Ang, S. Wang, C.H. Ling · IEEE Electron Device Letters · 2005 · 43 citations

Electrical Engineering, Engineering, Physics +14

Excitation pulse shape effects in drop test simulation of the actuator arm of a hard disk drive

B. J. Shi, S. Wang, Dongwei Shu et al. · Microsystem Technologies · 2005 · 21 citations

Engineering, Mechanics, Mechanical Engineering +4

Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

D. S. Ang, S. Wang · IEEE Electron Device Letters · 2006 · 14 citations

Suppressed Recovery, Electrical Engineering, Engineering +12

Effect of Nitrogen on the Frequency Dependence of Dynamic NBTI-Induced Threshold-Voltage Shift of the Ultrathin Oxynitride Gate P-MOSFET

S. Wang, D. S. Ang, G. A. Du · IEEE Electron Device Letters · 2008 · 11 citations

Semiconductor Technology, Electrical Engineering, Engineering +13