M. Mofidi

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

Raul-Adrian Cernea, Long Pham, Farookh Moogat et al. · IEEE Journal of Solid-State Circuits · 2009 · 76 citations

Engineering, Computer Engineering, Computer Science +14

A 56-nm CMOS 99-${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura et al. · IEEE Journal of Solid-State Circuits · 2007 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS

Cuong Trinh, Noboru Shibata, Takumi Nakano et al. · 2009 · 69 citations

Engineering, Computer Engineering, Electrical Engineering +16

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li, Seungpil Lee, Ken Oowada et al. · 2012 · 46 citations

Engineering, Computer Engineering, Computer Science +14

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

Ken Takeuchi, Y. Kameda, Shinji Fujimura et al. · 2006 · 37 citations

Engineering, Computer Engineering, Electrical Engineering +16