Zheng Tao

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Hans Mertens, R. Ritzenthaler, Andriy Hikavyy et al. · 2016 · 192 citations

Engineering, Si Nws, Bulk Si Substrates +16

Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS

A. Veloso, Geert Hellings, M. J. Cho et al. · 2015 · 52 citations

Engineering, Integrated Circuits, Quantum Engineering +18

Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning

Hans Mertens, Maryam Hosseini, T. Chiarella et al. · 2023 · 51 citations

Electrical Engineering, Engineering, Vlsi Design +14

(Invited) Vertical Nanowire FET Integration and Device Aspects

A. Veloso, Efrain Altamirano Sánchez, S. Brus et al. · ECS Transactions · 2016 · 49 citations

Low-power Electronics, Electrical Engineering, Physical Design (Electronics) +13

Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect

Liesbeth Witters, Jérôme Mitard, Roger Loo et al. · 2015 · 43 citations

Engineering, Integrated Circuits, Strained Germanium Quantum +16