Rashmi Jha

A Capacitance-Based Methodology for Work Function Extraction of Metals on High-<tex>$kappa$</tex>

Rashmi Jha, J. Gurganos, Y.H. Kim et al. · IEEE Electron Device Letters · 2004 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process

X. Chen, S. Samavedam, Vijay Narayanan et al. · 2008 · 113 citations

Engineering, Computer Engineering, Electrical Engineering +16

Novel synaptic memory device for neuromorphic computing

Saptarshi Mandal, Ammaarah El-Amin, Kaitlyn Alexander et al. · Scientific Reports · 2014 · 97 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +14

Switching Characteristics of $\hbox{Ru/HfO}_{2} \hbox{/TiO}_{2-x}\hbox{/Ru}$ RRAM Devices for Digital and Analog Nonvolatile Memory Applications

Branden Long, Yibo Li, Rashmi Jha · IEEE Electron Device Letters · 2012 · 60 citations

Engineering, Electrical Engineering, Materials Science +14

Gate Controlled Three-Terminal Metal Oxide Memristor

Eric Herrmann, Tony Bailey, Rashmi Jha · IEEE Electron Device Letters · 2018 · 54 citations

Engineering, Electrical Engineering, Materials Science +17