P. de Mierry

Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications

F. Omnès, Norman Marenco, B. Beaumont et al. · Journal of Applied Physics · 1999 · 93 citations

Engineering, Materials Engineering, Materials Science +15

Improved semipolar (112¯2) GaN quality using asymmetric lateral epitaxy

P. de Mierry, N. Kriouche, M. Némoz et al. · Applied Physics Letters · 2009 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +17

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

A. Bengoechea‐Encabo, Steven M. Albert, M. A. Sánchez-Garcı́a et al. · Journal of Crystal Growth · 2011 · 46 citations · Full text

Engineering, Materials Engineering, Materials Science +13

The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates

H. Kim‐Chauveau, P. de Mierry, J.‐M. Chauveau et al. · Journal of Crystal Growth · 2010 · 30 citations

Engineering, Materials Engineering, Materials Science +14

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

H. Machhadani, Mark Beeler, S. Sakr et al. · Journal of Applied Physics · 2013 · 23 citations · Full text

Engineering, Electrical Engineering, Materials Science +17