Mark Beeler

Intraband Absorption in Self-Assembled Ge-Doped GaN/AlN Nanowire Heterostructures

Mark Beeler, Pascal Hille, Jörg Schörmann et al. · Nano Letters · 2014 · 36 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Engineering +12

Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

Mark Beeler, Catherine Bougerol, E. Bellet‐Amalric et al. · Applied Physics Letters · 2013 · 33 citations

Wide-bandgap Semiconductor, Engineering, Thz Spectral Range +17

Correlation of optical and structural properties of GaN/AlN multi-quantum wells—<i>Ab initio</i> and experimental study

Agata Kamińska, Paweł Strąk, J. Borysiuk et al. · Journal of Applied Physics · 2016 · 33 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Optical Materials +20

<i>Ab initio</i> and experimental studies of polarization and polarization related fields in nitrides and nitride structures

Paweł Strąk, Paweł Kempisty, Konrad Sakowski et al. · AIP Advances · 2017 · 33 citations · Full text

Aluminium Nitride, Engineering, Cubic Boron Nitride +20

Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

Mark Beeler, Catherine Bougerol, E. Bellet‐Amalric et al. · Applied Physics Letters · 2014 · 32 citations

Wide-bandgap Semiconductor, Engineering, Terahertz Absorption +17