Mariia Anikeeva

Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

L. Lymperakis, Tobias Schulz, Christoph Freysoldt et al. · Physical Review Materials · 2018 · 52 citations

Engineering, Mechanical Engineering, Chemical Order +20

Performance and reproducibility of 13C and 15N hyperpolarization using a cryogen-free DNP polarizer

Arianna Ferrari, Josh P. Peters, Mariia Anikeeva et al. · Scientific Reports · 2022 · 32 citations · Full text

Influence of strain on the indium incorporation in (0001) GaN

Tobias Schulz, L. Lymperakis, Mariia Anikeeva et al. · Physical Review Materials · 2020 · 14 citations

Wide-bandgap Semiconductor, Engineering, Buffer Layer +16

Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices

P. Wolny, Mariia Anikeeva, Marta Sawicka et al. · Journal of Applied Physics · 2018 · 12 citations · Full text

Engineering, Crystal Growth Technology, Inxga1-xn/in0.02ga0.98n Superlattices +16

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

M. Siekacz, P. Wolny, Torsten Ernst et al. · Superlattices and Microstructures · 2019 · 11 citations

Electrical Engineering, Substrate Lattice Constant, Engineering +8