Mariia Anikeeva

Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

L. Lymperakis, Tobias Schulz, Christoph Freysoldt et al. · Physical Review Materials · 2018 · 53 citations

Engineering, Materials Engineering, Materials Science +17

Performance and reproducibility of 13C and 15N hyperpolarization using a cryogen-free DNP polarizer

Arianna Ferrari, Josh P. Peters, Mariia Anikeeva et al. · Scientific Reports · 2022 · 33 citations · Full text

Engineering, Biophysics, Radiology +17

Influence of strain on the indium incorporation in (0001) GaN

Tobias Schulz, L. Lymperakis, Mariia Anikeeva et al. · Physical Review Materials · 2020 · 14 citations

Natural Sciences, Materials Science, Physics +17

Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices

P. Wolny, Mariia Anikeeva, Marta Sawicka et al. · Journal of Applied Physics · 2018 · 12 citations · Full text

Natural Sciences, Materials Science, Physics +17

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

M. Siekacz, P. Wolny, Torsten Ernst et al. · Superlattices and Microstructures · 2019 · 11 citations

Engineering, Materials Science, Physics +16