Gerhard G. Fischer

SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay

B. Heinemann, R. Barth, D. Bolze et al. · 2010 · 164 citations

Engineering, Electrical Engineering, Microelectronics +9

SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

J. Böck, Klaus Aufinger, S. Boguth et al. · 2015 · 163 citations

Engineering, Electrical Engineering, Electronic Materials +14

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps

H. Rücker, B. Heinemann, Wolfgang Winkler et al. · IEEE Journal of Solid-State Circuits · 2010 · 148 citations

Engineering, Electrical Engineering, Microelectronics +13

Thermodynamic calculation of the binary systems M-Ga and investigation of ternary M-Ga-N phase equilibria (M=Ni, Co, Pd, Cr)

Joachim Gröbner, Roland Wenzel, Gerhard G. Fischer et al. · Journal of Phase Equilibria and Diffusion · 1999 · 55 citations

Natural Sciences, Materials Science, Physics +16

Low- and high-field electron-transport parameters for unstrained and strained Si/sub 1-x/Ge/sub x/

F. M. Bufler, Peter Gräf, B. Meinerzhagen et al. · IEEE Electron Device Letters · 1997 · 46 citations

Engineering, Materials Engineering, Materials Science +17