Hyun-Ho Doh

Mechanism of selective SiO2/Si etching with fluorocarbon gases (CF4, C4F8) and hydrogen mixture in electron cyclotron resonance plasma etching system

Hyun-Ho Doh, Junghun Kim, Seok-Hyun Lee et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1996 · 47 citations

Natural Sciences, Materials Engineering, Materials Science +14

Effect of hydrogen addition to fluorocarbon gases (CF4, C4F8) in selective SiO2/Si etching by electron cyclotron resonance plasma

Hyun-Ho Doh, Junghun Kim, Ki‐Woong Whang et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1996 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +14

Effects of bias frequency on reactive ion etching lag in an electron cyclotron resonance plasma etching system

Hyun-Ho Doh, Chung-Kyu Yeon, Ki‐Woong Whang · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 18 citations

Engineering, Electrical Engineering, Physics +13

Gas Residence Time Effects on Plasma Parameters: Comparison between Ar and C₄F₈

Hyun-Ho Doh, Yasuhiro Horiike · Japanese Journal of Applied Physics · 2001 · 15 citations

Natural Sciences, Chemistry, Physics +12