C. Bresolin - Concepedia

Author

C. Bresolin

STMicroelectronics (Switzerland)

Also Known As

BRESOLIN C., C Bresolin, C. Bresolin, Camillo Bresolin

Publications

219

Citations

H-Index

Concepts

All Affiliations

STMicroelectronics (Switzerland)Micron (Italy)University of Modena and Reggio Emilia Istituto Officina dei Materiali Politecnico di Milano

About

C. Bresolin is an author at STMicroelectronics (Switzerland) specializing in applied physics, engineering, and materials engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	9	9	175
2	Engineering	7	7	148
3	Chemical Engineering	1	1	15
4	Chemistry	1	1	15
5	Computer Engineering	1	1	12

C. Bresolin

Publications

188

Citations

H-Index

Page 1

	Year	Citations
Solid-phase epitaxial growth of Ge-Si alloys made by ion implantation Federico Corni, Stefano Frabboni, G. Ottaviani, Journal of Applied Physics Materials ScienceMaterials EngineeringSemiconductorsGermanium FluenceEngineering	1992	41
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories Mattia Boniardi, Daniele Ielmini, I. Tortorelli, Solid-State Electronics Electrical EngineeringEngineeringEmerging Memory TechnologyApplied PhysicsSet Operation Performance	2010	29
Thermal Stability of Ge2Sb2Te5 in Contact with Ti and TiN Vijayaharan A. Venugopal, G. Ottaviani, C. Bresolin, Journal of Electronic Materials Materials ScienceMaterials EngineeringEngineeringMaterial PropertySurface Science	2009	24
TiAl3 formation kinetic in sputtered Ti/AlCu0.5% thin films C. Bresolin, Steven J. Pirotta Microelectronic Engineering Materials EngineeringMaterials ScienceEngineeringSurface ScienceApplied Physics	2002	15
<title>Investigation of metal contamination by photocurrent measurements: validation and application to ion implantation processes</title> M. L. Polignano, C. Bresolin, F. Cazzaniga, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE EngineeringPhotocurrent MeasurementsAtomic Emission SpectroscopyMetal ContaminationChemistry	1995	15
Molibdenum contamination in silicon 1. Molibdenum detection by lifetime techniques M. L. Polignano, C. Bresolin, G. Pavia, Materials Science and Engineering B Molibdenum ContaminationPhysicsApplied PhysicsSilicon On InsulatorSilicon Debugging	1998	14
A comparison between zero and seven degrees of tilt implantation of As+, P+ and BF2+ C. Bresolin, C. Zaccherini, M. Anderle, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Tilt Implantation	1990	13
Low temperature dopant activation of BF2 implanted silicon G. Queirolo, C. Bresolin, Davide Robba, Journal of Electronic Materials Semiconductor Device FabricationApplied PhysicsSemiconductor DeviceSilicon On Insulator	1991	13
Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory Mattia Boniardi, Andrea Redaelli, I. Tortorelli, Materials ScienceMaterials EngineeringElectrical EngineeringMaterial AnalysisEngineering	2012	12
Impact of material composition on the write performance of phase-change memory devices Mattia Boniardi, Daniele Ielmini, Andrea L. Lacaita, Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyPcm Operation	2010	12

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