G. Pataut

High-efficient class F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz

Claude Duvanaud, S. Dietsche, G. Pataut et al. · IEEE Microwave and Guided Wave Letters · 1993 · 93 citations

Low-power Electronics, Electrical Engineering, Engineering +13

High efficiency free running class F oscillator

Michel Prigent, R. Camiade, G. Pataut et al. · 2002 · 20 citations

Low-power Electronics, Overall Oscillator Performance, Electrical Engineering +14

Low Noise Design of Dielectric Resonator FET Oscillators

M. Camiade, A. Bert, J. Graffeuil et al. · 1983 · 16 citations

Electrical Engineering, Engineering, Radio Frequency +15

Design of high power-addecd efficiency FET amplifiers operating with very low drain bias voltages for use in mobile telephones at 1.7 GHz

S. Dietsche, Claude Duvanaud, G. Pataut et al. · 1993 · 12 citations

Low-power Electronics, Electrical Engineering, Engineering +10

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

Mohsine Bouya, Dominique Carisetti, Nathalie Malbert et al. · Microelectronics Reliability · 2007 · 10 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +6