Kijeong Han

Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation

Kijeong Han, B. Jayant Baliga, Woongje Sung · IEEE Electron Device Letters · 2017 · 87 citations

Engineering, Electrical Engineering, Microelectronics +16

A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

Kijeong Han, B. Jayant Baliga, Woongje Sung · IEEE Electron Device Letters · 2017 · 53 citations

Engineering, Electrical Engineering, Microelectronics +12

Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

Kijeong Han, Aditi Agarwal, Ajit Kanale et al. · 2020 · 52 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results

Kijeong Han, B. Jayant Baliga · IEEE Transactions on Electron Devices · 2019 · 41 citations · Full text

Engineering, Electrical Engineering, Microelectronics +11

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

Aditi Agarwal, Kijeong Han, B. Jayant Baliga · IEEE Electron Device Letters · 2019 · 35 citations

Engineering, Electrical Engineering, Materials Science +16