Gianfranco Mastracchio

A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput

G. De Sandre, Luca Bettini, Alessandro Pirola et al. · 2010 · 68 citations

Non-volatile Memory, Engineering, Memory Design +17

A 4 Mb LV MOS-Selected Embedded Phase Change Memory in 90 nm Standard CMOS Technology

Guido De Sandre, Luca Bettini, Alessandro Pirola et al. · IEEE Journal of Solid-State Circuits · 2010 · 32 citations

Non-volatile Memory, Electrical Engineering, Engineering +13

Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures

A. Armigliato, A. Spessot, R. Balboni et al. · Journal of Applied Physics · 2006 · 16 citations · Full text

Engineering, Electron Diffraction, Silicon On Insulator +17

Initial reactions in Ti–Si bilayers: New indications from <i>in situ</i> measurements

R. Cocchi, D. Giubertoni, G. Ottaviani et al. · Journal of Applied Physics · 2001 · 14 citations

Engineering, Ti–si Bilayer, Thin Film Process Technology +17

High performance Flash memory for 65 nm embedded automotive application

F. Piazza, C. Boccaccio, S. Bruyère et al. · 2010 · 11 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +14