G. De Sandre

A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput

G. De Sandre, Luca Bettini, Alessandro Pirola et al. · 2010 · 68 citations

Non-volatile Memory, Engineering, Memory Design +17

Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond

R. Annunziata, P. Zuliani, Massimo Borghi et al. · 2009 · 60 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +14

Calculation of elastic constants in defected and amorphous silicon by quantum simulations

G. De Sandre, Luciano Colombo, C. E. Bottani · Physical review. B, Condensed matter · 1996 · 22 citations

Quantum-mechanical Calculation, Engineering, Silicon On Insulator +18

Stability of 1-D-CNN's with Dirichlet boundary conditions and global propagation dynamics

G. De Sandre · IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications · 2000 · 14 citations

Spectral Theory, Geometric Learning, Convolutional Neural Network +14

A 1 V, 26 μW extended temperature range band-gap reference in 130-nm CMOS technology

A. Cabrini, G. De Sandre, L. Gobbi et al. · 2005 · 14 citations

Low-power Electronics, Electrical Engineering, Engineering +13