M. Olmo - Concepedia

Author

M. Olmo

SunEdison (Italy)

Also Known As

M Olmo, M. Olmo, M. Virumbrales-del Olmo, Massimiliano Olmo

Publications

511

Citations

H-Index

Concepts

All Affiliations

SunEdison (Italy)SunEdison (United States)Institut für Solarenergieforschung

About

M. Olmo is an author at SunEdison (Italy) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	428
2	Applied Physics	7	7	428
3	Chemistry	3	3	210
4	Natural Sciences	1	1	75
5	Electrical Engineering	1	1	71

M. Olmo

Publications

487

Citations

H-Index

Page 1

	Year	Citations
The effect of oxide precipitates on minority carrier lifetime in p-type silicon John D. Murphy, Karsten Bothe, M. Olmo, Journal of Applied Physics EngineeringIntegrated CircuitsChemistrySilicon On InsulatorSemiconductor Device	2011	81
Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation K. F. Kelton, R. Falster, D. Gambaro, Journal of Applied Physics EngineeringOxygen PrecipitationOxygen IsotopeChemistrySilicon On Insulator	1999	75
The effect of oxide precipitates on minority carrier lifetime in <i>n</i>-type silicon John D. Murphy, Mohammad Al-Amin, Karsten Bothe, Journal of Applied Physics Materials ScienceSemiconductor TechnologyElectrical EngineeringSurface AreaEngineering	2015	71
Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si R. Falster, M. Cornara, D. Gambaro, Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena EngineeringHigh Temperature Pre-annealApplied PhysicsNucleationChemistry	1997	54
Vacancy-Assisted Oxygen Precipitation Phenomena in Si R. Falster, Marco Pagani, D. Gambaro, Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena EngineeringSurface ScienceApplied PhysicsVacuum DeviceSilicon On Insulator	1997	54
Spatial variations in oxygen precipitation in silicon after high temperature rapid thermal annealing Marco Pagani, R. Falster, Graham R. Fisher, Applied Physics Letters Materials ScienceEngineeringCrystalline DefectsPhysicsSurface Science	1997	48
The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior R. Falster, D. Gambaro, M. Olmo, MRS Proceedings Materials EngineeringWafer Scale ProcessingEngineeringNanoelectronicsApplied Physics	1998	45
Effect of composition and coating on the interparticle interactions and magnetic hardness of MFe<sub>2</sub>O<sub>4</sub> (M = Fe, Co, Zn) nanoparticles M. Olmo, A. Delgado-Cabello, Adrián Andrada‐Chacón, Physical Chemistry Chemical Physics	2017	40
Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen Mohan V. Jacob, P. Pichler, H. Ryssel, Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena	1997	19

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