Cristina Santinelli

Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilization

G. Hollinger, D. Gallet, M. Gendry et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 108 citations

Materials Science, Surface Characterization, Epitaxial Growth +15

Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy

M. Gendry, V. Drouot, Cristina Santinelli et al. · Applied Physics Letters · 1992 · 51 citations

Wide-bandgap Semiconductor, Engineering, Plastic Relaxation Mechanism +16

Growth modes and relaxation mechanisms of strained InGaAs layers grown on InP(001)

M. Gendry, V. Drouot, Cristina Santinelli et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 50 citations

Engineering, Strained Ingaas Layers, Short Edge Dislocations +21

Reduction of fast interface states and suppression of drift phenomena in arsenic-stabilized metal-insulator-InP structures

R. Blanchet, P. Viktorovitch, J. Chave et al. · Applied Physics Letters · 1985 · 30 citations

Engineering, Fast Interface States, Chemistry +19

The passivation of InP by arsenic surface stabilization and Al2O3 deposition: Correlations between interface chemistry and capacitance measurements

G. Hollinger, R. Blanchet, M. Gendry et al. · Journal of Applied Physics · 1990 · 30 citations

Engineering, Chemistry, Chemical Deposition +22