R. G. Filippi - Concepedia

Author

R. G. Filippi

IBM (United States)

Also Known As

Filippi, Ronald, R Filippi, R. Filippi, R. G. Filippi, R.G Filippi, R.G. Filippi, Ronald Filippi, Ronald G. Filippi

Publications

700

Citations

H-Index

Concepts

All Affiliations

IBM (United States)IBM Research - Thomas J. Watson Research Center Toshiba (United States)Cornell University Advanced Micro Devices (United States)

About

R. G. Filippi is an author at IBM (United States) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	22	598
2	Electrical Engineering	15	19	553
3	Applied Physics	14	18	526
4	Materials Engineering	12	13	337
5	Computer Engineering	4	4	80

R. G. Filippi

Publications

598

Citations

H-Index

Page 1

	Year	Citations
Electromigration threshold in copper interconnects P.-C. Wang, R. G. Filippi Applied Physics Letters Advanced PackagingMaterials ScienceElectrical EngineeringElectromigration TechniqueEngineering	2001	118
The electromigration short-length effect in Ti-AlCu-Ti metallization with tungsten studs R. G. Filippi, G. Biery, R. Wachnik Journal of Applied Physics EngineeringResistance Saturation ApproachInterconnect (Integrated Circuits)CorrosionTungsten Studs	1995	72
The effect of current density and stripe length on resistance saturation during electromigration testing R. G. Filippi, R. Wachnik, H. Aochi, Applied Physics Letters Materials EngineeringElectrical EngineeringResistance ChangeEngineeringSpecific Resistance	1996	53
Via-Depletion Electromigration in Copper Interconnects C. Christiansen, B. Li, J. Gill, IEEE Transactions on Device and Materials Reliability EngineeringVia-depletion ElectromigrationBimodal Failure DistributionsBimodal DistributionsInterconnect (Integrated Circuits)	2006	26
A time-dependent clustering model for non-uniform dielectric breakdown Ernest Y. Wu, Benzheng Li, J. H. Stathis, EngineeringDamage MechanismReliability EngineeringNumerical SimulationComputational Electromagnetics	2013	25
Threshold electromigration failure time and its statistics for Cu interconnects Baozhen Li, C. Christiansen, J. Gill, Journal of Applied Physics EngineeringIntegrated CircuitsFailure DistributionsInterconnect (Integrated Circuits)Reliability Engineering	2006	25
The effect of a threshold failure time and bimodal behavior on the electromigration lifetime of copper interconnects R. G. Filippi, Pinhe Wang, Andrew Brendler, IEEE International Reliability Physics Symposium proceedings EngineeringInterconnect (Integrated Circuits)CorrosionNanoelectronicsBimodal Behavior	2009	25
Effect of metal line width on electromigration of BEOL Cu interconnects Seungman Choi, C. Christiansen, Linjun Cao, EngineeringInterconnect (Integrated Circuits)Metal Line WidthAdvanced Packaging (Semiconductors)Nanoelectronics	2018	25
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL D. Edelstein, H. Rathore, C. Davis, EngineeringChip-package Reliability StressInterconnect (Integrated Circuits)Comprehensive Reliability EvaluationCu/pecvd Low-k Beol	2004	23
A 45 nm CMOS node Cu/Low-k/ Ultra Low-k PECVD SiCOH (k=2.4) BEOL Technology S. Sankaran, S. Arai, R. Augur, Materials ScienceMaterials EngineeringElectrical EngineeringBeol TechnologyEngineering	2006	22

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