Publication | Closed Access
Electromigration threshold in copper interconnects
118
Citations
15
References
2001
Year
Advanced PackagingMaterials ScienceElectrical EngineeringElectromigration TechniqueEngineeringAdvanced Packaging (Semiconductors)NanoelectronicsElectromigration ThresholdApplied PhysicsTime-dependent Dielectric BreakdownLine LengthElectronic PackagingCopper InterconnectsMicroelectronicsElectrochemical InterfaceInterconnect (Integrated Circuits)Electrical Insulation
The electromigration threshold in copper interconnects is reported in this study. The length-dependent electromigration degradation rate is observed and quantified in the temperature range of 295–400 °C. Based on the Blech electromigration model [I. A. Blech, J. Appl. Phys. 47, 1203 (1976)], a simplified equation is proposed to analyze the experimental data from various combinations of current density and interconnect length, as well as to estimate the electromigration threshold product of current density and line length, (jL)th, at a certain temperature. The resulting (jL)th value appears to be temperature dependent, decreasing with increasing temperature in the tested range between 295 and 400 °C.
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