Eun-Soon Yim

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Dongso Kim, Sunae Seo, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 529 citations

Filamentary Conductions, Experimental Results, Electrical Engineering +13

Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

In-Hwan Baek, D.C. Kim, Myoung‐Jae Lee et al. · 2006 · 216 citations

Prototype Binary Oxide, Electrical Engineering, Non-volatile Memory +13

Improvement of resistive memory switching in NiO using IrO2

D. C. Kim, Myoung‐Jae Lee, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 193 citations

Materials Science, Nio Growth, Electrical Engineering +13

Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size

K. T. Nam, S. C. Oh, J. E. Lee et al. · 2006 · 17 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +21