P. Kamiński

Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods

Christophe Longeaud, Jean‐Paul Kleider, P. Kamiński et al. · Semiconductor Science and Technology · 1999 · 34 citations

Engineering, Transient Photocurrent, Defect Tolerance +22

High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

Tymoteusz Ciuk, B. Stańczyk, Krystyna Przyborowska et al. · IEEE Transactions on Electron Devices · 2019 · 33 citations · Full text

Engineering, Semiconductors, Graphene Nanomeshes +17

Dielectric properties of semi-insulating silicon at microwave frequencies

Jerzy Krupka, P. Kamiński, R. Kozłowski et al. · Applied Physics Letters · 2015 · 28 citations

Dielectric Properties, Electrical Engineering, 23-Mev Protons +11

Intelligent measuring system for characterisation of defect centres in semi-insulating materials by photoinduced transient spectroscopy

M. Pawłowski, P. Kamiński, R. Kozłowski et al. · Metrology and Measurement Systems · 2005 · 24 citations

Engineering, Nondestructive Testing, Measurement +13

Formation and origin of the dominating electron trap in irradiated<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type silicon

Lasse Vines, E. V. Monakhov, Andrej Kuznetsov et al. · Physical Review B · 2008 · 23 citations

Mcts Measurements, Nuclear Beam Physics, Nuclear Physics +21