Jumpei Tajima

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Yoshinao Kumagai, Yuuki Enatsu, Masanari Ishizuki et al. · Journal of Crystal Growth · 2010 · 47 citations

Natural Sciences, Materials Engineering, Materials Science +12

Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire

Yoshinao Kumagai, Jumpei Tajima, Masanari Ishizuki et al. · Applied Physics Express · 2008 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +15

Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450°C

Jumpei Tajima, Hisashi Murakami, Yoshinao Kumagai et al. · Journal of Crystal Growth · 2009 · 21 citations

Engineering, Materials Engineering, Materials Science +13

Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C

Jumpei Tajima, Yuki Kubota, Rie Togashi et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +13

Control of in‐plane epitaxial relationship of <i>c</i> ‐plane AlN layers grown on <i>a</i> ‐plane sapphire substrates by hydride vapor phase epitaxy

Jumpei Tajima, Rie Togashi, Hisashi Murakami et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +13