Mehdi Salmani-Jelodar

Optimum High-k Oxide for the Best Performance of Ultra-Scaled Double-Gate MOSFETs

Mehdi Salmani-Jelodar, Hesameddin Ilatikhameneh, Sungguen Kim et al. · IEEE Transactions on Nanotechnology · 2016 · 87 citations · Full text

Engineering, Ultrascaled Mosfets, Semiconductor Device +18

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

Timothy B. Boykin, Mathieu Luisier, Mehdi Salmani-Jelodar et al. · Physical Review B · 2010 · 46 citations

Engineering, Silicon On Insulator, Strain Parameters +24

Design Guidelines for Sub-12 nm Nanowire MOSFETs

Mehdi Salmani-Jelodar, Saumitra Mehrotra, Hesameddin Ilatikhameneh et al. · IEEE Transactions on Nanotechnology · 2015 · 39 citations

Engineering, Semiconductor Materials, Integrated Circuits +17

Enhanced valence force field model for the lattice properties of gallium arsenide

Sebastian Steiger, Mehdi Salmani-Jelodar, Denis A. Areshkin et al. · Physical Review B · 2011 · 28 citations

Engineering, Lattice Properties, Phonon Dispersion +18

Transistor roadmap projection using predictive full-band atomistic modeling

Mehdi Salmani-Jelodar, S. Kim, K.K. Ng et al. · Applied Physics Letters · 2014 · 16 citations

Device Modeling, Semiconductors, Electrical Engineering +14