H. Kunishima

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Active since

2007

Affiliations

H. Kunishima is an author at NEC (Japan) specializing in dielectric breakdown, complementary metal-oxide-semiconductor technology, and microelectronics.

Publications per year

2007–2008

Publications

A Robust Embedded Ladder-Oxide/Cu Multilevel Interconnect Technology for 0.13 µm Complementary Metal Oxide Semiconductor Generation

Noriaki Oda, S. Ito, T. Takewaki et al. · Japanese Journal of Applied Physics · 2007 · 11 citations

Engineering, Computer Engineering, Electrical Engineering +17

Quantitative analysis of correlation between insulator surface copper contamination and TDDB lifetime based on actual measurement

Daisuke Oshida, T. Takewaki, Manabu Iguchi et al. · 2008 · 10 citations

Natural Sciences, Materials Engineering, Materials Science +13

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