Meng Lin

Si3N4/Si/<i>n</i>-GaAs capacitor with minimum interface density in the 1010 eV−1 cm−2 range

Z. Wang, Meng Lin, D. Biswas et al. · Applied Physics Letters · 1993 · 35 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

[Spatial equity analysis of urban green space from the perspective of balance between supply and demand: A case study of Futian District, Shenzhen, China.]

Jian Wu, Meng Lin, Weifeng Li · PubMed · 2016 · 23 citations

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

Zhiqiang Li, Xia An, Min Li et al. · IEEE Electron Device Letters · 2012 · 20 citations

Electrical Engineering, Ion Implantation, Engineering +12

An Improved <i>In Situ</i> Zircon U‐Pb Dating Method at High Spatial Resolution (≤ 10 μm Spot) by LA‐MC‐ICP‐MS and its Application

Meng Lin, Guibin Zhang, Nan Li et al. · Geostandards and Geoanalytical Research · 2021 · 14 citations

Engineering, Laser Applications, Laser Ablation +17

Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation

Zhiqiang Li, Xia An, Min Li et al. · IEEE Electron Device Letters · 2013 · 11 citations

Engineering, Sb Dopants, Sb Co-implantation +17