D. Biswas

Molecular beam epitaxial growth and characterization of InSb on Si

Jen‐Inn Chyi, D. Biswas, S. Venkatakrishna Iyer et al. · Applied Physics Letters · 1989 · 88 citations

Insb Thickness, Engineering, Optoelectronic Devices +16

Catalyst-free direct growth of InP quantum dots on Si by MOCVD: a step toward monolithic integration

Nripendra N. Halder, Souvik Kundu, Rabibrata Mukherjee et al. · Journal of Nanoparticle Research · 2012 · 64 citations

Materials Science, Ii-vi Semiconductor, Engineering +12

Study of strain and disorder of In<i>x</i>Ga1−<i>x</i>P/(GaAs, graded GaP) (0.25≤<i>x</i>≤0.8) using spectroscopic ellipsometry and Raman spectroscopy

Huikyo Lee, D. Biswas, M. V. Klein et al. · Journal of Applied Physics · 1994 · 54 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +19

Investigations of the Si3N4/Si/<i>n</i>-GaAs insulator-semiconductor interface with low interface trap density

David Mui, D. Biswas, J. Reed et al. · Applied Physics Letters · 1992 · 53 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures

S. Strite, D. Biswas, N. S. Kumar et al. · Applied Physics Letters · 1990 · 44 citations

Electrical Engineering, Epitaxial Growth, Engineering +12