V.N. Mordkovich

Statistics

Publications

Citations

H-Index

Active since

1988

Affiliations

Institute of Microelectronics Technology and High Purity Materials(Current)

V.N. Mordkovich is an author at Institute of Microelectronics Technology and High Purity Materials specializing in materials science, silicon materials, and materials engineering.

Publications per year

1988–2011

Publications

Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon

A.B. Danilin, K.A. Drakin, V.V. Kukin et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +17

Behavior of oxygen and nitrogen upon simultaneous substoichiometric implantation into silicon

Agnieszka Boruń, A.B. Danilin, V.N. Mordkovich et al. · Radiation Effects · 1988 · 14 citations

Engineering, Materials Engineering, Materials Science +14

A model of ion synthesis of buried dielectric layers in silicon

M. Yu. Barabanenkov, Agnieszka Boruń, A.B. Danilin et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 13 citations

Engineering, Electrical Engineering, Materials Science +14

Possibilities of X-Ray Interfernce Diffractometry for the Investigation of Ion-Doped Layers

V. V. Aristov, V.N. Mordkovich, A. Yu. Nikulin et al. · physica status solidi (a) · 1990 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +11

Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures

V.N. Mordkovich, D. M. Pazhin · Semiconductors · 2011 · 10 citations

Engineering, Materials Engineering, Materials Science +17

1–5 of 5