J. W. Burd

Spontaneous and Stimulated Carrier Lifetime (77°K) in a High-Purity, Surface-Free GaAs Epitaxial Layer

P.D. Dapkus, N. Holonyak, R. D. Burnham et al. · Journal of Applied Physics · 1970 · 50 citations

Engineering, Electrical Engineering, Materials Science +16

Optical Phase-Shift Measurement of Carrier Decay Times (77°K) on Lightly Doped Double-Surface and Surface-Free Epitaxial GaAs

D. L. Keune, N. Holonyak, R. D. Burnham et al. · Journal of Applied Physics · 1971 · 36 citations

Engineering, Electrical Engineering, Materials Science +14

THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY-DOPED LIMIT

J. A. Rossi, N. Holonyak, P.D. Dapkus et al. · Applied Physics Letters · 1968 · 33 citations

Natural Sciences, Materials Science, Physics +17

Optical phase shift measurement of residual defects in vapor epitaxial GaAsP

H. R. Zwicker, D. R. Scifres, N. Holonyak et al. · Solid State Communications · 1971 · 23 citations

Engineering, Materials Engineering, Materials Science +14