J. W. F. M. Maes

Characterization of epitaxial layers by the depth dependence of boron diffusivity

K. J. van Oostrum, P. C. Zalm, W.B. de Boer et al. · Applied Physics Letters · 1992 · 31 citations

Engineering, Reduced Boron Diffusivity, Epitaxial Layers +16

Hetero-epitaxial growth of GaAs on garnets

J. Haisma, Bert Koek, J. W. F. M. Maes et al. · Journal of Crystal Growth · 1987 · 21 citations

Hetero-epitaxial Growth, Applied Physics, Molecular Beam Epitaxy +2

Sharp boron spikes in silicon grown by fast gas switching chemical vapor deposition

P. J. Roksnoer, J. W. F. M. Maes, A.T. Vink et al. · Applied Physics Letters · 1991 · 20 citations

Engineering, Boron-doping Spikes, Fast Gas +16

The Effect of the Asymmetric Vortex in Vertical VPE Reactors on Deposition Nonuniformity

P. J. Roksnoer, C. van Opdorp, J. W. F. M. Maes et al. · Journal of The Electrochemical Society · 1989 · 17 citations · Full text

Unsteady Flow, Engineering, Physics +11