Zexuan Zhang

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode <i>β</i>-Ga2O3 vertical transistors

Zongyang Hu, Kazuki Nomoto, Wenshen Li et al. · Applied Physics Letters · 2018 · 166 citations

Engineering, Electrical Engineering, Materials Science +14

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of &amp;lt;1 <i>μ</i>A/cm2

Wenshen Li, Zongyang Hu, Kazuki Nomoto et al. · Applied Physics Letters · 2018 · 163 citations

Engineering, Electrical Engineering, Materials Science +17

2.44 kV Ga&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; vertical trench Schottky barrier diodes with very low reverse leakage current

Wenshen Li, Zongyang Hu, Kazuki Nomoto et al. · 2018 · 102 citations

Engineering, Electrical Engineering, Materials Engineering +17

Toroidal dipole bound states in the continuum in all-dielectric metasurface for high-performance refractive index and temperature sensing

Linhui Guo, Zexuan Zhang, Qun Xie et al. · Applied Surface Science · 2023 · 85 citations

Natural Sciences, Materials Science, Physics +17

Versatile terahertz graphene metasurface based on plasmon-induced transparency

Qun Xie, Linhui Guo, Zexuan Zhang et al. · Applied Surface Science · 2022 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +14