H. L. Au

A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes

T. C. Lee, S. Fung, C. D. Beling et al. · Journal of Applied Physics · 1992 · 60 citations

Electrical Engineering, Ideality N Factor, Engineering +10

Semi-insulating GaAs: A possible substrate for a field-assisted positron moderator

Y. Y. Shan, H. L. Au, C. C. Ling et al. · Applied Physics A · 1994 · 28 citations

Semiconductors, Electrical Engineering, Semiconductor Device +7

Temperature dependence of the ideality factor of GaAs and Si schottky diodes

T. C. Lee, T. P. Chen, H. L. Au et al. · physica status solidi (a) · 1995 · 27 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

P. Asoka‐Kumar, H.‐J. Gossmann, F. C. Unterwald et al. · Physical review. B, Condensed matter · 1993 · 25 citations

Point Defects, Engineering, Positron Annihilation Spectroscopy +17

Positron studies of metal-oxide-semiconductor structures

H. L. Au, P. Asoka-Kumar, B. Nielsen et al. · Journal of Applied Physics · 1993 · 19 citations

Engineering, Physics, Positron Annihilation Spectroscopy +12