M. A. Khan

Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Leonid Chernyak, A. Osinsky, H. Temkin et al. · Applied Physics Letters · 1996 · 142 citations

Semiconductors, Wide-bandgap Semiconductor, Semiconductor Technology +12

Band-edge exciton states in AlN single crystals and epitaxial layers

L. Chen, B. J. Skromme, Rafael Dalmau et al. · Applied Physics Letters · 2004 · 75 citations · Full text

Aluminium Nitride, Optical Materials, Engineering +18

Electronic and optical properties of vacancy defects in single-layer transition metal dichalcogenides

M. A. Khan, Mikhail Erementchouk, Joshua R. Hendrickson et al. · Physical review. B./Physical review. B · 2017 · 70 citations · Full text

Engineering, Semiconductors, Ii-vi Semiconductor +18

Optoelectronics with single layer group-VIB transition metal dichalcogenides

M. A. Khan, Michael N. Leuenberger · Nanophotonics · 2018 · 25 citations · Full text

Engineering, Two-dimensional Materials, Optoelectronic Devices +16

Ultra‐Long Lifetimes of Single Quantum Emitters in Monolayer WSe ₂ /hBN Heterostructures

Chandriker Kavir Dass, M. A. Khan, Genevieve Clark et al. · Advanced Quantum Technologies · 2019 · 25 citations

Quantum Photonics, Engineering, Monolayer Wse 2 +21