Venky Ramachandra

13.5 A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology

Chang Siau, Kwang Ho Kim, Seungpil Lee et al. · 2019 · 85 citations

Engineering, Computer Engineering, Electrical Engineering +15

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Maejima Hiroshi, K. Kanda, Susumu Fujimura et al. · 2018 · 78 citations

Engineering, Computer Engineering, Computer Science +13

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

Yan Li, Seungpil Lee, Ken Oowada et al. · 2012 · 46 citations

Engineering, Computer Engineering, Computer Science +14

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology

Higuchi Tsutomu, Takuyo Kodama, Koji Kato et al. · 2021 · 30 citations

Engineering, Computer Engineering, Computer Science +13

A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface

J. Yuh, Jason Li, Heguang Li et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 29 citations

Engineering, Computer Engineering, Computer Science +15