Lezhi Wang

Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory

He Zhang, Wang Kang, Lezhi Wang et al. · IEEE Transactions on Electron Devices · 2017 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +17

1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer

Xiangdong Li, Junbo Wang, Jincheng Zhang et al. · IEEE Electron Device Letters · 2023 · 39 citations

Engineering, Electrical Engineering, Materials Science +15

Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation

Lezhi Wang, Wang Kang, Farbod Ebrahimi et al. · IEEE Electron Device Letters · 2018 · 36 citations

Engineering, Computer Engineering, Computer Science +13

Interfacial Perpendicular Magnetic Anisotropy in Sub-20 nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory

Shouzhong Peng, Wang Kang, Mengxing Wang et al. · IEEE Magnetics Letters · 2017 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer

Kaihua Cao, Huisong Li, Wenlong Cai et al. · IEEE Transactions on Magnetics · 2018 · 28 citations

Natural Sciences, Materials Engineering, Materials Science +17