Chaeheon Kim

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO₂/HZO) Bilayer Heterostructures and High-Pressure Annealing

V. Gaddam, Giuk Kim, Taeho Kim et al. · ACS Applied Materials & Interfaces · 2022 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +17

Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network

Junghyeon Hwang, Hongrae Joh, Chaeheon Kim et al. · ACS Applied Materials & Interfaces · 2024 · 25 citations

Engineering, Computer Engineering, Neural Circuitry +9

Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures

Junghyeon Hwang, Chaeheon Kim, Jinho Ahn et al. · Nano Convergence · 2024 · 22 citations · Full text

Natural Sciences, Materials Science, Physics +17

High Pressure Microwave Annealing Effect on Electrical Properties of Hf_<i>x</i>Zr_1–<i>x</i>O Films near Morphotropic Phase Boundary

Minhyun Jung, Chaeheon Kim, Junghyeon Hwang et al. · ACS Applied Electronic Materials · 2023 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å &amp; high-k of 70 for DRAM Technology

V. Gaddam, Junghyeon Hwang, Hunbeom Shin et al. · 2024 · 12 citations

Natural Sciences, Materials Engineering, Materials Science +16