Hunbeom Shin - Concepedia

Author

Hunbeom Shin

Korea Advanced Institute of Science and Technology ORCID

Also Known As

Hunbeom Shin

Publications

292

Citations

H-Index

Concepts

All Affiliations

Korea Advanced Institute of Science and Technology Samsung (South Korea)Yonsei University Hanyang University

About

Hunbeom Shin is an author at Korea Advanced Institute of Science and Technology specializing in applied physics, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	126
2	Applied Physics	5	5	126
3	Electrical Engineering	4	4	101
4	Computer Engineering	2	2	40
5	Chemical Engineering	1	1	25

Hunbeom Shin

Publications

217

Citations

H-Index

Page 1

	Year	Citations
High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory Giuk Kim, Sang-Ho Lee, Taehyong Eom, Journal of Materials Chemistry C Materials ScienceSpintronicsElectrical EngineeringMaterials EngineeringEngineering	2022	36
Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices Yeongseok Jeong, V. Gaddam, Youngin Goh, IEEE Transactions on Electron Devices Materials ScienceChemical EngineeringOxygen Vacancy ControlEngineeringMaterial Analysis	2022	25
A method of controlling the imprint effect in hafnia ferroelectric device Hunbeom Shin, V. Gaddam, Youngin Goh, Applied Physics Letters Materials ScienceImprint FieldsMultiferroicsElectrical EngineeringBilayer Capacitors	2023	25
Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices Sehee Lim, Youngin Goh, Young Kyu Lee, IEEE Journal of Solid-State Circuits Non-volatile MemoryDual-mode OperationsEngineeringCrosspoint ArrayBcam Data	2023	21
Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors Giuk Kim, Dong Han Ko, Taeho Kim, ACS Applied Materials & Interfaces	2022	20
The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications Taeho Kim, Giuk Kim, Young Kyu Lee, Advanced Functional Materials Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureFerroelectric Random-access Memory	2022	19
In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling Giuk Kim, Hyojun Choi, Hunbeom Shin,	2024	19
Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices Giuk Kim, Hunbeom Shin, Taehyong Eom, 2022 International Electron Devices Meeting (IEDM)	2022	15
High Pressure Microwave Annealing Effect on Electrical Properties of Hf<sub><i>x</i></sub>Zr<sub>1–<i>x</i></sub>O Films near Morphotropic Phase Boundary Minhyun Jung, Chaeheon Kim, Junghyeon Hwang, ACS Applied Electronic Materials	2023	14
Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications Hongrae Joh, Sooji Nam, Minhyun Jung, ACS Applied Materials & Interfaces	2023	13

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