Giuk Kim

Statistics

Publications

Citations

297

H-Index

Active since

2021

Affiliations

Korea Advanced Institute of Science and Technology(Current)

Yonsei University

Samsung (South Korea)

Hanyang University

Giuk Kim is an author at Korea Advanced Institute of Science and Technology specializing in engineering, electrical engineering, and microelectronics.

Top concepts

EngineeringApplied PhysicsMaterial ScienceMicroelectronicsFunctional MaterialsElectrical EngineeringFerroelectric Random-access MemoryThin FilmsComputer EngineeringComputer Architecture

Publications per year

2021–2024

Publications

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO<sub>2</sub>/HZO) Bilayer Heterostructures and High-Pressure Annealing

V. Gaddam, Giuk Kim, Taeho Kim et al. · ACS Applied Materials & Interfaces · 2022 · 57 citations

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

Giuk Kim, Sang-Ho Lee, Taehyong Eom et al. · Journal of Materials Chemistry C · 2022 · 36 citations

Materials Science, Spintronics, Electrical Engineering +15

Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices

Yeongseok Jeong, V. Gaddam, Youngin Goh et al. · IEEE Transactions on Electron Devices · 2022 · 25 citations

Materials Science, Chemical Engineering, Oxygen Vacancy Control +13

A method of controlling the imprint effect in hafnia ferroelectric device

Hunbeom Shin, V. Gaddam, Youngin Goh et al. · Applied Physics Letters · 2023 · 25 citations

Materials Science, Imprint Fields, Multiferroics +13

High‐Performance and High‐Endurance HfO<sub>2</sub>‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel

Taeho Kim, Junghyeon Hwang, Giuk Kim et al. · physica status solidi (RRL) - Rapid Research Letters · 2021 · 21 citations

Materials Science, Non-volatile Memory, Electrical Engineering +15

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