Carlo Gilardi

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

Gregory Pitner, Zichen Zhang, Qing Lin et al. · 2020 · 33 citations

Nanosheet, Engineering, Semiconductor Device +17

Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs

Qing Lin, Gregory Pitner, Carlo Gilardi et al. · IEEE Electron Device Letters · 2022 · 17 citations

Semiconductors, Device Modeling, Electrical Engineering +14

Building high performance transistors on carbon nanotube channel

Gregory Pitner, Nathaniel S. Safron, Tzu‐Ang Chao et al. · 2023 · 16 citations

Electrical Engineering, Engineering, Carbon Nanotube Channel +14

Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors

Qing Lin, Carlo Gilardi, Sheng‐Kai Su et al. · ACS Nano · 2023 · 16 citations

Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors

Carlo Gilardi, Robert K. A. Bennett, Youngki Yoon et al. · IEEE Transactions on Electron Devices · 2022 · 14 citations · Full text

Device Modeling, Semiconductors, Electrical Engineering +15