M. Leys

Formation of metallic In in InGaN∕GaN multiquantum wells

Benny Van Daele, Gustaaf Van Tendeloo, K. Jacobs et al. · Applied Physics Letters · 2004 · 52 citations

Wide-bandgap Semiconductor, Engineering, Microstructural Changes +16

AlGaN‐based heterostructures grown on 4 inch Si(111) by MOVPE

Kai Cheng, M. Leys, Joff Derluyn et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 34 citations

Semiconductors, Materials Science, Electrical Engineering +14

On the growth of gallium phosphide layers on gallium phosphide substrates by MOVPE

M. Leys, Mats‐Erik Pistol, H. Titze et al. · Journal of Electronic Materials · 1989 · 24 citations

Materials Science, Materials Engineering, Gallium Phosphide Substrates +10

Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

Domenica Visalli, M. Van Hove, Joff Derluyn et al. · IEEE Transactions on Electron Devices · 2010 · 24 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

Kai Cheng, S. Degroote, M. Leys et al. · Journal of Crystal Growth · 2010 · 20 citations

Materials Engineering, Materials Science, Aluminium Nitride +7