M. G. Mil’vidskiĭ

Author

M. G. Mil’vidskiĭ

Also Known As

M G Mil'vidskiĭ, M Milvidskii, M. G. MIL'VIDSKII, M. G. Mil'vidskii, M. G. Milvidskii, M. G. Mil’vidskii, M. G. Mil’vidskiĭ, M. Milvidskii, M.G Mil'vidskii, M.G Mil’vidskii

145

Publications

633

Citations

H-Index

Concepts

All Affiliations

Ural Institute of Metals Giredmet (Russia)Institute for Design Problems in Microelectronics P.N. Lebedev Physical Institute of the Russian Academy of Sciences Physico-Technical Institute

About

M. G. Mil’vidskiĭ is an author at Ural Institute of Metals specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	15	376
2	Applied Physics	12	16	396
3	Materials Engineering	2	2	31
4	Chemical Engineering	1	1	25
5	Electrical Engineering	1	1	34

M. G. Mil’vidskiĭ

Publications

445

Citations

H-Index

Page 1

	Year	Citations
Properties of Si donors and persistent photoconductivity in AlGaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Solid-State Electronics EngineeringSi DonorsApplied PhysicsAluminum Gallium NitrideCategoryiii-v Semiconductor	1998	87
Creation of defects during the growth of semiconductor single crystals and films M. G. Mil’vidskiĭ, É. P. Bochkarev Journal of Crystal Growth Materials ScienceSemiconductorsEngineeringCrystalline DefectsCrystal Growth Technology	1978	39
Deep centers in AlGaN-based light emitting diode structures A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Solid-State Electronics Electrical EngineeringSolid-state LightingEngineeringDeep CentersApplied Physics	1999	34
Structural defects in the epitaxial layers of semiconductors M. G. Mil’vidskiĭ, V. B. Osvenskiĭ SemiconductorsEngineeringApplied PhysicsStructural DefectsSemiconductor Material	1985	34
Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties M. G. Mil’vidskiĭ, V. V. Chaldyshev Semiconductors	1998	33
A study of phase equilibria and heterojunctions in Ga–In–As–Sb quaternary system L. M. Dolginov, P G Eliseev, A. N. Lapshin, Kristall und Technik Wide-bandgap SemiconductorEngineeringPhase EquilibriaGa–in–as–sb Quaternary SystemLaser Applications	1978	30
Injection heterolaser based on InGaAsSb four-component solid solution L. M. Dolginov, L. V. Druzhinina, P G Eliseev, Soviet Journal of Quantum Electronics Optical PumpingPhotonicsChemical EngineeringEngineeringLaser Science	1978	25
Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, Solid-State Electronics Materials ScienceEngineeringElectron Microscope StudiesAlgan FilmsSurface Science	1998	23
The mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals V. K. Artemyev, V.I. Folomeev, V.P. Ginkin, Journal of Crystal Growth Marangoni Convection InfluencePhysicsCrystal Growth TechnologyApplied PhysicsDopant Distribution	2001	20
Diffuse x-ray scattering study of the formation of microdefects in heat-treated dislocation-free large-diameter silicon wafers S. Yu. Matsnev, M. V. Mezhennyi, M. G. Mil’vidskiĭ, Physics of the Solid State	2003	16

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