M. J. Binns

Interactions of hydrogen molecules with bond-centered interstitial oxygen and another defect center in silicon

R. Pritchard, M. J. Ashwin, James H. R. Tucker et al. · Physical review. B, Condensed matter · 1997 · 152 citations

An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free silicon

F M Livingston, S. Messoloras, R. C. Newman et al. · Journal of Physics C Solid State Physics · 1984 · 139 citations

Engineering, Chemistry, Silicon On Insulator +19

Oxygen loss during thermal donor formation in Czochralski silicon: New insights into oxygen diffusion mechanisms

S.A. McQuaid, M. J. Binns, C. A. Londos et al. · Journal of Applied Physics · 1995 · 98 citations

Engineering, Solid-state Chemistry, Experimental Thermodynamics +21

Carbon-related radiation damage centres in Czochralski silicon

G. Davies, A. S. Oates, R. C. Newman et al. · Journal of Physics C Solid State Physics · 1986 · 78 citations

Carbon Content, Radiation Damage Process, Engineering +15

A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption

W. Bergholz, M. J. Binns, G. R. Booker et al. · Philosophical Magazine B · 1989 · 73 citations

Materials Science, Small-angle Neutron Scattering, Infrared Absorption +15