M. J. Binns

Interactions of hydrogen molecules with bond-centered interstitial oxygen and another defect center in silicon

R. Pritchard, M. J. Ashwin, James H. R. Tucker et al. · Physical review. B, Condensed matter · 1997 · 152 citations

Natural Sciences, Materials Science, Physics +16

An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free silicon

F M Livingston, S. Messoloras, R. C. Newman et al. · Journal of Physics C Solid State Physics · 1984 · 140 citations

Natural Sciences, Materials Engineering, Materials Science +15

Oxygen loss during thermal donor formation in Czochralski silicon: New insights into oxygen diffusion mechanisms

S.A. McQuaid, M. J. Binns, C. A. Londos et al. · Journal of Applied Physics · 1995 · 99 citations

Engineering, Materials Engineering, Materials Science +17

Carbon-related radiation damage centres in Czochralski silicon

G. Davies, A. S. Oates, R. C. Newman et al. · Journal of Physics C Solid State Physics · 1986 · 78 citations

Natural Sciences, Materials Science, Physics +14

A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption

W. Bergholz, M. J. Binns, G. R. Booker et al. · Philosophical Magazine B · 1989 · 74 citations

Engineering, Materials Engineering, Materials Science +12