P.J. Vold

Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface

N.C. Cirillo, M. S. Shur, P.J. Vold et al. · IEEE Electron Device Letters · 1985 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Ion Implantation +11

Complementary heterostructure insulated gate field effect transistors (HIGFETs)

N.C. Cirillo, M. S. Shur, P.J. Vold et al. · 1985 · 28 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Ionizing Radiation Hardness of GaAs Technologies

M. A. Listvan, P.J. Vold, D.K. Arch · IEEE Transactions on Nuclear Science · 1987 · 28 citations

Electrical Engineering, Ion Implantation, Engineering +14

Ultra-high-speed ring oscillators based on self-aligned-gate modulation-doped <i>n</i> ⁺ -(Al, Ga)As/GaAs FETs

N.C. Cirillo, J. Abrokwah, A. Fraasch et al. · Electronics Letters · 1985 · 16 citations

Refractory metal silicides for self-aligned gate modulation doped <i>n</i>+-(Al,Ga)As/GaAs field-effect transistor integrated circuits

N.C. Cirillo, Ho Kyoon Chung, P.J. Vold et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 15 citations

Semiconductors, Self-aligned Gate Modulation, Electrical Engineering +11