R. W. Ryan

Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

R. J. Malik, Richard Nottenberg, E. Fred Schubert et al. · Applied Physics Letters · 1988 · 144 citations

Wide-bandgap Semiconductor, Engineering, Graphite Filament +16

A generic approach for the determination of residues of alkylating agents in active pharmaceutical ingredients by in situ derivatization–headspace–gas chromatography–mass spectrometry

Roberto Alzaga, R. W. Ryan, Karen Taylor-Worth et al. · Journal of Pharmaceutical and Biomedical Analysis · 2007 · 78 citations

Medicinal Chemistry, Residue (Chemistry), Engineering +15

Volatile compounds from six species of truffle – head-space analysis and vapor analysis at high mass resolution

Raymond E. March, Don S. Richards, R. W. Ryan · International Journal of Mass Spectrometry · 2006 · 60 citations

Chemical Measurement, Engineering, Volatile Compounds +11

High-gain, high-frequency AlGaAs/GaAs graded band-gap base bipolar transistors with a Be diffusion setback layer in the base

R. J. Malik, Federico Capasso, R. A. Stall et al. · Applied Physics Letters · 1985 · 42 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +10

Doping limits of C, Be, and Si in GaAs grown by solid source molecular-beam epitaxy with a thermally cracked As2 source

R. J. Malik, J. Nagle, M. Micovic et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 34 citations

Engineering, Si-dopant Fluxes, Semiconductor Device +18