R. Gleichmann

Precipitation of oxygen in dislocation-free silicon

K. Tempelhoff, F. Spiegelberg, R. Gleichmann et al. · physica status solidi (a) · 1979 · 127 citations

Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductors

H. Blumtritt, R. Gleichmann, J. Heydenreich et al. · physica status solidi (a) · 1979 · 43 citations

Engineering, Charge Carriers, Semiconductor Nanostructures +17

Interpretation of the EBIC contrast of dislocations in silicon

L. Pasemann, H. Blumtritt, R. Gleichmann · physica status solidi (a) · 1982 · 37 citations

Materials Science, Planar Silicon Diode, Engineering +14

Structural and electrical properties ofn-type bulk gallium arsenide grown from non-stoichiometric melts

R. Fornari, C. Frigeri, R. Gleichmann · Journal of Electronic Materials · 1989 · 28 citations

Materials Engineering, Materials Science, Non-stoichiometric Melts +7

Process-induced defects in solar cell silicon

R. Gleichmann, B. Cunningham, D. G. Ast · Journal of Applied Physics · 1985 · 23 citations

Engineering, Severe Plastic Deformation, Mechanical Engineering +17