Jeffrey C. Shearer

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 939 citations

Engineering, Nanocomputing, Semiconductor Device +17

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 139 citations

Engineering, Electron-beam Lithography, Finfet Technology +18

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 97 citations

Engineering, Vlsi Design, Finfet Technology +18

Composite SiO2/TiO2 and amine polymer/TiO2 nanoparticles produced using plasma-enhanced chemical vapor deposition

Jeffrey C. Shearer, Mary J. Fisher, Dirk-Jan Hoogeland et al. · Applied Surface Science · 2009 · 32 citations

Materials Science, Chemical Engineering, Engineering +10

Ti and NiPt/Ti liner silicide contacts for advanced technologies

Praneet Adusumilli, Emre Alptekin, M. Raymond et al. · 2016 · 31 citations

Materials Engineering, Materials Science, Electrical Engineering +15