J. Matsunaga - Concepedia

Author

J. Matsunaga

Also Known As

J. Matsunaga, J.-I. Matsunaga, Jun'ichi MATSUNAGA, Jun'ichi Matsunaga, Jun-Ichi Matsunaga, Jun-ichi Matsunaga, Junichi Matsunaga

Publications

673

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)

About

J. Matsunaga is an author at Toshiba (Japan) specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	20	494
2	Applied Physics	7	7	159
3	Chemical Engineering	2	2	49
4	Natural Sciences	1	1	87
5	Biology	1	1	87

J. Matsunaga

Publications

516

Citations

H-Index

Page 1

	Year	Citations
Disclosure of the “Fairy” of Fairy‐Ring‐Forming Fungus <i>Lepista sordida</i> Jae‐Hoon Choi, Keiji Fushimi, Nobuo Abe, ChemBioChem BiologyFungal DiversityBiosynthesisEngineeringBotany	2010	87
Depth-First Picture Expression Viewed from Digital Picture Processing Eiji Kawaguchi, Tsutomu Endo, J. Matsunaga IEEE Transactions on Pattern Analysis and Machine Intelligence Lossy CompressionEngineeringImage ManipulationDepth-first Picture ExpressionImage Analysis	1983	54
Selective polysilicon oxidation technology for VLSI isolation N. Matsukawa, Hiroshi Nozawa, J. Matsunaga, IEEE Transactions on Electron Devices EngineeringVlsi DesignField Isolation TechnologyIntegrated CircuitsSilicon On Insulator	1982	38
A low power 46 ns 256 kbit CMOS static RAM with dynamic double word line T. Sakurai, J. Matsunaga, M. Isobe, IEEE Journal of Solid-State Circuits Hardware SecurityLow-power ElectronicsElectrical EngineeringEngineeringVlsi Design	1984	37
A 64Kb CMOS RAM Satoshi Konishi, J. Matsunaga, T. Ohtani, Hardware SecurityFault-tolerant 8K×8bElectrical EngineeringMemory ArchitectureEngineering	1982	29
Characterization of two step impact ionization and its influence in NMOS and PMOS VLSI's J. Matsunaga, H.S. Momose, H. Iizuka, Secondary ImpactEngineeringIon ProcessSemiconductor DeviceIon Implantation	1980	26
Effects of silicon surface orientation on submicron CMOS devices M. Kinugawa, M. Kakumu, T. Usami, Electrical EngineeringEngineeringTriode Channel TransconductanceNanoelectronicsSilicon Surface Orientation	1985	26
Evidence for impact-ionized electron injection in substrate of <i>n</i>-channel MOS structures J. Matsunaga, S. Kohyama Applied Physics Letters Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1978	24
A highly reliable interconnection for a BF<sup>+</sup> <sub>2</sub>-implanted junction utilizing a TiN/Ti barrier metal system Tatsuro Maeda, Takashi Nakayama, S. Shima, IEEE Transactions on Electron Devices	1987	22
Homogeneous Heteroepitaxial NiSi<sub>2</sub> Formation on (100)Si I. Kunishima, K. Suguro, Tomonori Aoyama, Japanese Journal of Applied Physics SemiconductorsOxide HeterostructuresMaterials ScienceEpitaxial GrowthEngineering	1990	22

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